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et al [1] demonstrated that by adding multiple diode in series, the capacitance in a ESD diode string network improved Addressing the presence of the n-well to substrate capacitance, the circuit can be represented as a transmission line of capacitor elements Figure 45 is a representation of the ESD diode string Note that the rst segment contains the ESD down diode n-well to substrate shunt capacitance term Each successive element of the transmission line contains a series p /n-well capacitance term and a shunt n-well capacitor term The network contains N stages, where in the Nth stage the last series p /n-well capacitor is electrically connected to a termination (eg, VDD).

peripheral vascular abnormalities once thought to be the key causal factor, research has shown that biochemical imbalances, neurotransmitter/receptor dysfunction, and neuronal suppression play pivotal roles as well (Olesen & Goadsby, 2000) Tension-type headache has received a number of labels over the years (muscle contraction headache, psychogenic headache, depression headache, stress headache, conversion headache, psychomyogenic headache, and the like), which re ect the varied views and confusion about its etiology The IHS classi cation committee proposed a four-group scheme to help investigators and clinicians sort out the role of various causative factors.

Hence, ignoring the resistance terms and the interconnect capacitance terms, the ESD diode string representation can be shown as a capacitive distributed network with each successive diode element serving as a series element, and the n-well to substrate term serving as a shunt capacitance Another perspective is that each successive stage can be represented as a capacitor divider term Note that this network can include the diode resistance and interconnect terms by providing more complex RC distributed network representation From the discussion on double-diode networks and the ESD diode string networks, it should be apparent that the type, size, and number of up diodes and down diodes can be modi ed to achieve capacitive decoupling and improved linearity Hence in general, the network can be adjusted to achieve improved impedance, linearity, stability, noise rejection, and noise injection through modi cation of these elements.

In the RF ESD design of ESD diode string networks, the following RF ESD design practices can be applied: A minimum number of diode elements are needed to address the dc voltage differential conditions The capacitance loading can be reduced by the introduction of series diode elements The linearity improvement can be modi ed by the placement of series diode elements Capacitance, linearity, and loading improvements can be obtained by the utilization of different types of reverse and forward bias elements, the number of elements, and the physical size of the various elements in the network..

100 101 102 103 104 1 10 100 1000 10, 000

Again, we want X alone. But rst we must settle for 3X. Subtract 7 from both sides of the equation.

p(x n ) 1 Pr((x n , X n ) A (n) )

Tension-type sufferers are now grouped on the basis of chronicity (episodic versus chronic), as this has been found to have a direct bearing on outcome, and the presence of identi able muscle involvement (evidence of pericranial muscle tenderness upon palpation or elevated electromyographic readings versus the absence of this evidence), as the role of muscle contraction in this headache type has been questioned, resulting in a 2 2 classi cation table This more expanded coding format asks diagnosticians to identify the most likely causative factors by specifying whether one or more of the following factors are present: oromandibular dysfunction, psychosocial stress, anxiety, depression, delusion, muscular stress, drug overuse, or other headache condition Unfortunately, researchers have rarely used this level of precision when investigating pathophysiology of tension-type headache so progress has been slow at partialing out the role of the numerous suspected causes.

(outer/inner diameter: 10/8 mm; thickness: 1 mm) (Fig. 11.4b,c, See Color Plate 6B). During the consolidation process, we transfer EHTs to a stretch device to continue culture under de ned phasic strain (10%, 2 Hz) for 5 7 days (Fig. 11.4c, See Color Plate 6B). Under these conditions optimal maturation of EHTs has been observed. Longer periods of stretch often resulted in EHT disruption. Alternatively, EHTs can be cultured under static stretch on simple stainless steel holders, for up to 4 weeks.